类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 8A |
rds on (max) @ id, vgs: | 19.2mOhm @ 8.3A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 62nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1945pF @ 10V |
功率 - 最大值: | 3.1W |
工作温度: | -50°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AO4806Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 9.4A 8-SOIC |
|
2SK2727-ERochester Electronics |
10A, 500V, N-CHANNEL MOSFET |
|
APTM10HM19FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 100V 70A SP3 |
|
AO8814Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 7.5A 8TSSOP |
|
SQJ960EP-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 8A |
|
BSL806NL6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF432Rochester Electronics |
HEXFET POWER MOSFETS |
|
SQJ244EP-T1_GE3Vishay / Siliconix |
MOSFET DUAL N-CHA 40V PPAK SO-8L |
|
ALD212904PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
|
6LN04CH-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMC2025UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
|
FDW9926NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPG20N06S2L50ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 20A 8TDSON |