English
简体中文
MOSFET 2N-CH 60V 8A
SPARE PART
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A |
| rds on (max) @ id, vgs: | 36mOhm @ 5.3A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 735pF @ 25V |
| 功率 - 最大值: | 34W |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | PowerPAK® SO-8 Dual |
| 供应商设备包: | PowerPAK® SO-8 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSL806NL6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF432Rochester Electronics |
HEXFET POWER MOSFETS |
|
SQJ244EP-T1_GE3Vishay / Siliconix |
MOSFET DUAL N-CHA 40V PPAK SO-8L |
|
ALD212904PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
|
6LN04CH-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMC2025UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
|
FDW9926NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPG20N06S2L50ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 20A 8TDSON |
|
VMM45-02FWickmann / Littelfuse |
MOSFET 2N-CH 200V 45A TO-240AA |
|
BUK9K52-60E,115Nexperia |
MOSFET 2N-CH 60V 16A LFPAK56D |
|
NTQD6968NR2GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMD6N03R2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 6A 8SOIC |
|
APTC60TAM24TPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 600V 95A SP6-P |