类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 16A |
rds on (max) @ id, vgs: | 49mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 10nC @ 10V |
输入电容 (ciss) (max) @ vds: | 725pF @ 25V |
功率 - 最大值: | 32W |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOT-1205, 8-LFPAK56 |
供应商设备包: | LFPAK56D |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTQD6968NR2GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMD6N03R2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 6A 8SOIC |
|
APTC60TAM24TPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 600V 95A SP6-P |
|
ALD110908APALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
IPG20N04S4L08ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 40V 20A 8TDSON |
|
FDMS3604SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/23A POWER56 |
|
AO4840EAlpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CHANNEL 40V 6A 8SOIC |
|
SP8K32FRATBROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET (CORRESP |
|
PMDPB70XP,115Rochester Electronics |
NOW NEXPERIA PMDPB70XP - SMALL S |
|
ALD212900PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
|
FW907-TL-ERochester Electronics |
TRANSISTOR |
|
NDS9948Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 60V 2.3A 8-SOIC |
|
ALD1102PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |