类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Standard |
漏源电压 (vdss): | 12V, 20V |
电流 - 连续漏极 (id) @ 25°c: | 6A, 3.4A |
rds on (max) @ id, vgs: | 25mOhm @ 5.2A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18.5nC @ 8V |
输入电容 (ciss) (max) @ vds: | 787pF @ 6V |
功率 - 最大值: | 1.36W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-UDFN Exposed Pad |
供应商设备包: | U-DFN2020-6 (Type B) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APTC60AM45BC1GRoving Networks / Microchip Technology |
MOSFET 3N-CH 600V 49A SP1 |
|
FDMS3660SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 30A/60A POWER56 |
|
IRF9395MTRPBFRochester Electronics |
DIRECTFET DUAL P-CHANNEL POWER M |
|
ZXMC10A816N8TCZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 100V 2A 8-SOIC |
|
5HN01S-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
FDMB2308PZSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH MLP2X3 |
|
DMN3270UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
NTHD4502NT1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NTMFD4C88NT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IRF7311PBFRochester Electronics |
HEXFET POWER MOSFET |
|
ALD210814SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
|
BSL308PEH6327XTSA1IR (Infineon Technologies) |
MOSFET 2P-CH 30V 2A 6TSOP |
|
DMP2065UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 4.5A UDFN2020-6 |