English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) Common Drain |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | 36mOhm @ 5.7A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 3030pF @ 10V |
| 功率 - 最大值: | 800mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-WDFN Exposed Pad |
| 供应商设备包: | 6-MLP (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN3270UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
NTHD4502NT1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NTMFD4C88NT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IRF7311PBFRochester Electronics |
HEXFET POWER MOSFET |
|
ALD210814SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
|
BSL308PEH6327XTSA1IR (Infineon Technologies) |
MOSFET 2P-CH 30V 2A 6TSOP |
|
DMP2065UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 4.5A UDFN2020-6 |
|
QS8M51TRROHM Semiconductor |
MOSFET N/P-CH 100V 2A/1.5A TSMT8 |
|
2N7002VASanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 280MA SOT563F |
|
NTLJD3183CZTBGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
SSM6N37FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.25A 2-2N1D |
|
EFC6611R-TFRochester Electronics |
N-CHANNEL, MOSFET |
|
PHC21025,118Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
