English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.3A |
| rds on (max) @ id, vgs: | 58mOhm @ 2.9A, 4.5V |
| vgs(th) (最大值) @ id: | 700mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 29nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 780pF @ 15V |
| 功率 - 最大值: | 2W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7313PBFRochester Electronics |
HEXFET POWER MOSFET |
|
QS6K21TRROHM Semiconductor |
MOSFET 2N-CH 45V 1A TSMT6 |
|
SSM6N951L,EFFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET RDSON: 4.4MO |
|
FS50KM-2#E52Rochester Electronics |
DISCRETE / POWER MOSFET |
|
BUK7K89-100EXNexperia |
MOSFET 2N-CH 100V 13A LFPAK56D |
|
ZXMD63P03XTAZetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 8-MSOP |
|
MAX8659ETL+Rochester Electronics |
MASTER-SLAVE CPU CORE REGULATOR |
|
DMC3016LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 8.2A/6.2A 8SO |
|
SSM6P35AFE,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
DMN1250UFEL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V 24V U-QFN1515-1 |
|
EPC2101EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
|
SI7922DN-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 100V 1.8A 1212-8 |
|
SLA5065Sanken Electric Co., Ltd. |
MOSFET 4N-CH 60V 7A 15-SIP |
