DIODE ZENER
MOSFET 2N-CH 10.6V 0.08A 8SOIC
IC DRAM 512MBIT PARALLEL 54WBGA
类型 | 描述 |
---|---|
系列: | EPAD®, Zero Threshold™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Matched Pair |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 10.6V |
电流 - 连续漏极 (id) @ 25°c: | 80mA |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | 20mV @ 10µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | 500mW |
工作温度: | - |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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