类型 | 描述 |
---|---|
系列: | eGaN® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
场效应管特征: | GaNFET (Gallium Nitride) |
漏源电压 (vdss): | 100V |
电流 - 连续漏极 (id) @ 25°c: | 1.7A, 500mA |
rds on (max) @ id, vgs: | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
vgs(th) (最大值) @ id: | 2.5V @ 100µA, 2.5V @ 20µA |
栅极电荷 (qg) (max) @ vgs: | 0.16nC @ 5V, 0.044nC @ 5V |
输入电容 (ciss) (max) @ vds: | 16pF @ 50V, 7pF @ 50V |
功率 - 最大值: | - |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 9-VFBGA |
供应商设备包: | 9-BGA (1.35x1.35) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
QS8J1TRROHM Semiconductor |
MOSFET 2P-CH 12V 4.5A TSMT8 |
|
2N7002DW-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.23A SOT-363 |
|
SQ1912AEEH-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 20V POWERPAK SC70-6 |
|
FDMD8240LSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 23A |
|
SIL2623-TPMicro Commercial Components (MCC) |
MOSFET 2 P-CH 30V 3A SOT23-6L |
|
DMTH6016LPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI506 |
|
MC7252KDW-TPMicro Commercial Components (MCC) |
N+P-CHANNELMOSFETEFFECTSOT-363 |
|
RM6A5P30S8Rectron USA |
MOSFET 2 P-CHANNEL 30V 6.5A 8SOP |
|
TT8J11TCRROHM Semiconductor |
MOSFET 2P-CH 12V 3.5A TSST8 |
|
NTUD3170NZT5GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 0.22A SOT-963 |
|
DMC6070LND-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 60V 8POWERDI |
|
IRF7317TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 20V 8-SOIC |
|
SQ4937EY-T1_BE3Vishay / Siliconix |
MOSFET 2 P-CHANNEL 30V 5A 8SOIC |