MOSFET 2P-CH 12V 3.5A TSST8
IC DRAM 64MBIT PAR 86TSOP II
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate, 1.5V Drive |
漏源电压 (vdss): | 12V |
电流 - 连续漏极 (id) @ 25°c: | 3.5A |
rds on (max) @ id, vgs: | 43mOhm @ 3.5A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 22nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 2600pF @ 6V |
功率 - 最大值: | 650mW |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SMD, Flat Lead |
供应商设备包: | 8-TSST |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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