English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 12V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.3A |
| rds on (max) @ id, vgs: | 27mOhm @ 5.1A, 4.5V |
| vgs(th) (最大值) @ id: | 450mV @ 5mA (Min) |
| 栅极电荷 (qg) (max) @ vgs: | 30nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | 830mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMV65XPEA,215Rochester Electronics |
2.8A, 20V, P CHANNEL, SILICON, M |
|
FDMA1027PSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 3A MICROFET |
|
UT6J3TCRROHM Semiconductor |
-20V PCH+PCH POWER MOSFET |
|
DMC2053UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
UT6JB5TCRROHM Semiconductor |
-40V DUAL PCH+PCH, DFN2020, POWE |
|
SIX3134K-TPMicro Commercial Components (MCC) |
N-CHANNELMOSFETSOT-563 |
|
QS5K2TRROHM Semiconductor |
MOSFET 2N-CH 30V 2A TSMT5 |
|
NVMFD5483NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 6.4A 8DFN |
|
NTJD4401NT1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIA921EDJ-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.5A SC70-6 |
|
EPC2100EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
|
MSCSM70VM19C3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
ALD1105PBLAdvanced Linear Devices, Inc. |
MOSFET 2N/2P-CH 10.6V 14DIP |
