English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta), 40A (Ta) |
| rds on (max) @ id, vgs: | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 4mA, 2.5V @ 16mA |
| 栅极电荷 (qg) (max) @ vgs: | 4.9nC @ 15V, 19nC @ 15V |
| 输入电容 (ciss) (max) @ vds: | 475pF @ 15V, 1960pF @ 15V |
| 功率 - 最大值: | - |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSCSM70VM19C3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
ALD1105PBLAdvanced Linear Devices, Inc. |
MOSFET 2N/2P-CH 10.6V 14DIP |
|
UM6K33NTNROHM Semiconductor |
MOSFET 2N-CH 50V 0.2A UMT6 |
|
BSO330N02KGFUMA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SH8J62TB1ROHM Semiconductor |
MOSFET 2P-CH 30V 4.5A SOP8 |
|
SIZ902DT-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 16A POWERPAIR |
|
CSD87384MTexas Instruments |
MOSFET 2N-CH 30V 30A 5PTAB |
|
DMP2004DMK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.55A SOT-26 |
|
UT6JC5TCRROHM Semiconductor |
-60V DUAL PCH+PCH, DFN2020, POWE |
|
RF1S9540Rochester Electronics |
P-CHANNEL POWER MOSFETS |
|
CSD86360Q5DTexas Instruments |
MOSFET 2N-CH 25V 50A 8SON |
|
NDS9936Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIZ926DT-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 25V 8-POWERPAIR |
