FIXED IND 2.6NH 600MA 120 MOHM
PM-MOSFET-SIC-SBD~-SP3F
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 4 N-Channel |
场效应管特征: | Silicon Carbide (SiC) |
漏源电压 (vdss): | 1200V (1.2kV) |
电流 - 连续漏极 (id) @ 25°c: | 173A (Tc) |
rds on (max) @ id, vgs: | 16mOhm @ 80A, 20V |
vgs(th) (最大值) @ id: | 2.8V @ 2mA |
栅极电荷 (qg) (max) @ vgs: | 464nC @ 20V |
输入电容 (ciss) (max) @ vds: | 6040pF @ 1000V |
功率 - 最大值: | 745W (Tc) |
工作温度: | -40°C ~ 175°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | SP3F |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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