English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 430mA |
| rds on (max) @ id, vgs: | 900mOhm @ 430mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 175pF @ 16V |
| 功率 - 最大值: | 250mW |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSM6L40TU,LFToshiba Electronic Devices and Storage Corporation |
X34 PB-F UF6 S-MOS (LF) TRANSIST |
|
2N7002K36Rectron USA |
MOSFET 2 N-CH 60V 250MA SOT23-6 |
|
SSM6P15FU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
CSD87588NTTexas Instruments |
MOSFET 2N-CH 30V 25A 5PTAB |
|
NTJD5121NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 295MA SOT363 |
|
SIA777EDJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V/12V SC70-6L |
|
FX30KMJ-06#B00Rochester Electronics |
HIGH SPEED SWITCHING P CHANNEL , |
|
AO4854Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 8A 8SOIC |
|
UM6K31NFHATCNROHM Semiconductor |
2.5V DRIVE NCH+NCH MOSFET |
|
FPF1C2P5BF07ARochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
SIS932EDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH DL 30V PWRPAK 1212-8 |
|
FDG6301N-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 0.22A SC70-6 |
|
NVMFS5832NLT1GRochester Electronics |
40V, 0.0072OHM, N-CHANNEL, MOSF |
