English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.9A, 2.1A |
| rds on (max) @ id, vgs: | 58mOhm @ 2.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.8nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 150pF @ 10V |
| 功率 - 最大值: | 1.4W, 1.3W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
| 供应商设备包: | 6-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVTJD4001NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SC-88 |
|
APTC60TAM35PGRoving Networks / Microchip Technology |
MOSFET 6N-CH 600V 72A SP6-P |
|
CSD87503Q3ETexas Instruments |
MOSFET 2 N-CHANNEL 30V 10A 8SON |
|
SI5504BDC-T1-E3Vishay / Siliconix |
MOSFET N/P-CH 30V 4A 1206-8 |
|
FDZ1905PZSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 6WLCSP |
|
SP001017058Rochester Electronics |
IPP60R380P6 - 600V N-CHANNEL |
|
FDC6310PSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 2.2A SSOT6 |
|
ALD114813PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
SI3552DV-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 30V 6-TSOP |
|
SQJB42EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK SO8 |
|
SI7922DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 100V 1.8A 1212-8 |
|
SSM6N815R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 100V 2A 6TSOPF |
|
SH8MA4TB1ROHM Semiconductor |
SH8MA4TB1 IS LOW ON-RESISTANCE A |
