CAP CER 1000PF 630V X7R RADIAL
N-CHANNEL POWER MOSFET
类型 | 描述 |
---|---|
系列: | UltraFET™ |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 5.1A |
rds on (max) @ id, vgs: | 49mOhm @ 5.1A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 23nC @ 10V |
输入电容 (ciss) (max) @ vds: | 620pF @ 25V |
功率 - 最大值: | 2.5W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQB12N50TMRochester Electronics |
TRANS MOSFET N-CH 500V 12.1A 3PI |
|
PMDXB950UPELZNexperia |
20 V, DUAL P-CHANNEL TRENCH MOSF |
|
SQ3989EV-T1_GE3Vishay / Siliconix |
MOSFET 2 P-CH 30V 2.5A 6TSOP |
|
MMDF2P02ER2GRochester Electronics |
P-CHANNEL POWER MOSFET |
|
SI1023X-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 0.37A SC89-6 |
|
FD6M043N08Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MIC5018BM4TRRochester Electronics |
HIGH-SIDE MOSFET DRIVER |
|
CSD75204W15Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
EFC4619R-TRSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH EFCP |
|
SSM6N57NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 4A UDFN6 |
|
FDY1002PZSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 830MA SOT563F |
|
IPG20N06S4L26AATMA1Rochester Electronics |
IPG20N06 - 55V-60V N-CHANNEL AUT |
|
SLA5064Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 60V 10A 12-SIP |