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MOSFET 2N-CH 20V 6A PPAK 1212-8
HALF BRIDGE BASED MOSFET DRIVER,
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| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Common Drain |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A |
| rds on (max) @ id, vgs: | 26mOhm @ 8.5A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | 1.5W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | PowerPAK® 1212-8 Dual |
| 供应商设备包: | PowerPAK® 1212-8 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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电话: 00852-52612101
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