类型 | 描述 |
---|---|
系列: | NexFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Common Drain |
场效应管特征: | Standard |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 7.8nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | 1.7W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 4-XFLGA |
供应商设备包: | 4-Picostar (1.31x1.31) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMC67D8UFDBQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V U-DFN2020- |
|
SI8902EDB-T2-E1Vishay / Siliconix |
MOSFET 2N-CH 20V 3.9A 6-MFP |
|
RMD0A8P20ES9Rectron USA |
MOSFET 2 P-CH 20V 800MA SOT363 |
|
ZXMN6A09DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 4.3A 8-SOIC |
|
SI6562CDQ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 6.7A 8-TSSOP |
|
DMC1030UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V 24V U-DFN2020-6 |
|
DMG6601LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 26TSOT |
|
FS50UMJ-3Rochester Electronics |
50A, 150V, N-CHANNEL MOSFET |
|
SIZ320DT-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 25V 30/40A 8POWER33 |
|
SI5935CDC-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4A 1206-8 |
|
SI3439KDW-TPMicro Commercial Components (MCC) |
N AND P-CHANNEL MOSFETSOT-363 |
|
SI5908DC-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 4.4A 1206-8 |
|
FDMD84100Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 7A 8-PQFN |