English
简体中文
RES SMD 23.7KOHM 0.1% 0.15W 0805
TVS DIODE 13.6V 22.5V DO214AB
MOSFET 2N-CH 25V 30/40A 8POWER33
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerPAIR®, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 25V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc), 40A (Tc) |
| rds on (max) @ id, vgs: | 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.9nC @ 4.5V, 11.9nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 660pF @ 12.5V, 1370pF @ 12.5V |
| 功率 - 最大值: | 16.7W, 31W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerWDFN |
| 供应商设备包: | 8-Power33 (3x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI5935CDC-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4A 1206-8 |
|
SI3439KDW-TPMicro Commercial Components (MCC) |
N AND P-CHANNEL MOSFETSOT-363 |
|
SI5908DC-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 4.4A 1206-8 |
|
FDMD84100Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 7A 8-PQFN |
|
DMC2038LVTQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V 24V TSOT26 |
|
NDS9952ASanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 3.7/2.9A 8SOIC |
|
SQJ952EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
FS70KM-2#B00Rochester Electronics |
70A, 100V, N-CHANNEL MOSFET |
|
NVMFD5C478NLWFT1GSanyo Semiconductor/ON Semiconductor |
40V 14.5 MOHM T8 S08FL DU |
|
IRF9133Rochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL POWE |
|
IRL6297SDTRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 15A DIRECTFET |
|
IRF7380PBFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS9933ASanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 3.8A 8SOIC |