类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 40V |
电流 - 连续漏极 (id) @ 25°c: | 12A |
rds on (max) @ id, vgs: | 10mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 23nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1100pF @ 25V |
功率 - 最大值: | 3W |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerTDFN |
供应商设备包: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7216DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 6A PPAK 1212-8 |
|
SQJQ910EL-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 100V POWERPAK8X8 |
|
FS30ASJ-06F#B00Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
APTC60HM35T3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 72A SP3 |
|
CSD86356Q5DTTexas Instruments |
SYNCHRONOUS BUCK NEXFET POWER BL |
|
SI1926DL-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 60V 0.37A SC-70-6 |
|
SI1034X-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 0.18A SC89-6 |
|
DMC3028LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 6.6A/6.8A 8SO |
|
DMN2029USD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 5.8A 8SO |
|
SIZ348DT-T1-GE3Vishay / Siliconix |
MOSFET DUAL N-CHAN 30V POWERPAIR |
|
APTM10TAM09FPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 100V 139A SP6-P |
|
FCAB21520L1Panasonic |
MOSFET 2 N-CHANNEL 10SMD |
|
DMG1026UV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.41A SOT-563 |