CAP CER 2400PF 250V C0G/NP0 RAD
DIODE GEN PURP 200V 1A DO214AC
MOSFET 2N-CH 60V 0.41A SOT-563
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 410mA |
rds on (max) @ id, vgs: | 1.8Ohm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 1.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.45nC @ 10V |
输入电容 (ciss) (max) @ vds: | 32pF @ 25V |
功率 - 最大值: | 580mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOT-563, SOT-666 |
供应商设备包: | SOT-563 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMC2004DWK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT-363 |
|
NVMFD5875NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 7A SO8FL |
|
DMNH6021SPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 60V 8.2A POWERDI |
|
SH8M4TB1ROHM Semiconductor |
MOSFET N/P-CH 30V 9A/7A 8SOIC |
|
FDD8424H-F085ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
ZXMP6A16DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 60V 2.9A 8-SOIC |
|
NTGD3148NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3A 6TSOP |
|
BUK9K22-80EXNexperia |
MOSFET 2 N-CH 80V 21A LFPAK56D |
|
PMDPB95XNE2XNexperia |
MOSFET 2 N-CH 30V 2.7A 6HUSON |
|
CSD88539NDTexas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC |
|
TSM250NB06DCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |
|
QH8K26TRROHM Semiconductor |
QH8K26 IS LOW ON-RESISTANCE AND |
|
PMDPB42UN,115Rochester Electronics |
PMDPB42UN - SMALL SIGNAL, HUSON6 |