English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 40V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A, 6.5A |
| rds on (max) @ id, vgs: | 24mOhm @ 9A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1000pF @ 20V |
| 功率 - 最大值: | 1.3W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| 供应商设备包: | TO-252-4L |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZXMP6A16DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 60V 2.9A 8-SOIC |
|
NTGD3148NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3A 6TSOP |
|
BUK9K22-80EXNexperia |
MOSFET 2 N-CH 80V 21A LFPAK56D |
|
PMDPB95XNE2XNexperia |
MOSFET 2 N-CH 30V 2.7A 6HUSON |
|
CSD88539NDTexas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC |
|
TSM250NB06DCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |
|
QH8K26TRROHM Semiconductor |
QH8K26 IS LOW ON-RESISTANCE AND |
|
PMDPB42UN,115Rochester Electronics |
PMDPB42UN - SMALL SIGNAL, HUSON6 |
|
FDW2601NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS8958ASanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 7A/5A 8SOIC |
|
DMP31D7LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
|
DMPH6050SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CHANNEL 5.2A 8SO |
|
2SK2631-TL-E-ONRochester Electronics |
POWER MOSFET |
