English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.7A (Ta) |
| rds on (max) @ id, vgs: | 99mOhm @ 2.8A, 4.5V |
| vgs(th) (最大值) @ id: | 1.25V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.5nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 258pF @ 15V |
| 功率 - 最大值: | 510mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-UDFN Exposed Pad |
| 供应商设备包: | 6-HUSON-EP (2x2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD88539NDTexas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC |
|
TSM250NB06DCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |
|
QH8K26TRROHM Semiconductor |
QH8K26 IS LOW ON-RESISTANCE AND |
|
PMDPB42UN,115Rochester Electronics |
PMDPB42UN - SMALL SIGNAL, HUSON6 |
|
FDW2601NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS8958ASanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 7A/5A 8SOIC |
|
DMP31D7LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
|
DMPH6050SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CHANNEL 5.2A 8SO |
|
2SK2631-TL-E-ONRochester Electronics |
POWER MOSFET |
|
DMN2025UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
|
EFC4621R-TRSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH EFCP |
|
NX138AKSFNexperia |
MOSFET 2 N-CH 60V 170MA SOT363 |
|
FDPC4044Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 8MLP |
