类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Common Drain |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | 4.3mOhm @ 27A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 49nC @ 10V |
输入电容 (ciss) (max) @ vds: | 3215pF @ 15V |
功率 - 最大值: | 1W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerWDFN |
供应商设备包: | Powerclip-33 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTHD5903T1Rochester Electronics |
P-CHANNEL MOSFET |
|
NDS8961Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
ALD310700PCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16DIP |
|
ECH8655R-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 9A 8ECH |
|
SQJQ906E-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK8X8 |
|
BSO604NS2XUMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 5A 8DSO |
|
2SK2110-T1-AZRochester Electronics |
SMALL SIGNAL MOSFET |
|
SI5515CDC-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 4A 1206-8 |
|
DMN3032LFDBQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 6.2A U-DFN2020 |
|
FDMQ8203Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N/2P-CH 100V/80V 12-MLP |
|
SI4554DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 40V 8A 8SO |
|
SI9926CDY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 20V 8A 8-SOIC |
|
CSD75208W1015TTexas Instruments |
MOSFET 2P-CH 20V 1.6A 6WLP |