English
简体中文
MOSFET 2P-CH 20V 4.8A 8SOIC
IC RF TXRX ISM<1GHZ 28VFQFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.8A |
| rds on (max) @ id, vgs: | 33mOhm @ 6.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1700pF @ 16V |
| 功率 - 最大值: | 750mW |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSCSM70AM07CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
2SJ645-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
SI4340CDY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 20V 14.1A 14-SOIC |
|
SI1539CDL-T1-BE3Vishay / Siliconix |
MOSFET N/P-CH 30V SOT363 |
|
MCCD2005-TPMicro Commercial Components (MCC) |
MOSFET 2N-CH 20V 8A |
|
SP8M24FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET (CORRESP |
|
DMN2041LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 7.63A 8SO |
|
DMG6301UDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 25V 0.24A SOT363 |
|
DMN6066SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 3.3A 8SO |
|
IPG20N06S4L14ATMA2IR (Infineon Technologies) |
MOSFET 2N-CH 60V 20A 8TDSON |
|
FDW2503NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SP8J5FRATBROHM Semiconductor |
4V DRIVE PCH+PCH MOSFET (CORRESP |
|
DF11MR12W1M1B11BPSA1IR (Infineon Technologies) |
MOSFET MOD 1200V 50A |