English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.3A |
| rds on (max) @ id, vgs: | 66mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10.3nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 502pF @ 30V |
| 功率 - 最大值: | 1.8W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPG20N06S4L14ATMA2IR (Infineon Technologies) |
MOSFET 2N-CH 60V 20A 8TDSON |
|
FDW2503NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SP8J5FRATBROHM Semiconductor |
4V DRIVE PCH+PCH MOSFET (CORRESP |
|
DF11MR12W1M1B11BPSA1IR (Infineon Technologies) |
MOSFET MOD 1200V 50A |
|
FDG6303NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 500MA SC88 |
|
PSMN5R0-100ESRochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |
|
SQ3985EV-T1_BE3Vishay / Siliconix |
MOSFET 2 P-CH 20V 3.9A 6TSOP |
|
DMC3400SDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V SOT363 |
|
FW217A-TL-2WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 35V 6A 8SOIC |
|
2N7002PS/ZLXNexperia |
MOSFET 2N-CH 60V 320MA SOT363 |
|
IRFHS9351TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 30V 2.3A PQFN |
|
LM5109SD/NOPBRochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
TC1550TG-GRoving Networks / Microchip Technology |
MOSFET N/P-CH 500V 8SOIC |
