类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 2.3A |
rds on (max) @ id, vgs: | 170mOhm @ 3.1A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 10µA |
栅极电荷 (qg) (max) @ vgs: | 3.7nC @ 10V |
输入电容 (ciss) (max) @ vds: | 160pF @ 25V |
功率 - 最大值: | 1.4W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-VQFN Exposed Pad |
供应商设备包: | 6-PQFN (2x2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
LM5109SD/NOPBRochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
TC1550TG-GRoving Networks / Microchip Technology |
MOSFET N/P-CH 500V 8SOIC |
|
DMG6968UDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 6.5A SOT-26 |
|
IRF7306TRIR (Infineon Technologies) |
MOSFET 2P-CH 30V 3.6A 8-SOIC |
|
SI4936BDY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 6.9A 8-SOIC |
|
BUK9K5R6-30EXNexperia |
MOSFET 2N-CH 30V 40A 56LFPAK |
|
IPW80R290C3AFKSA1Rochester Electronics |
PFET, 17A I(D), 800V, 0.29OHM, 1 |
|
ALD210808ASCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
|
SH8M3TB1ROHM Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A SOP8 |
|
FDMA1028NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3.7A 6MICROFET |
|
SI7234DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 12V 60A PPAK SO-8 |
|
DMN6040SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 5A 8SO |
|
SIA910EDJ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 12V 4.5A SC-70-6 |