English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 12V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A |
| rds on (max) @ id, vgs: | 28mOhm @ 5.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16nC @ 8V |
| 输入电容 (ciss) (max) @ vds: | 455pF @ 6V |
| 功率 - 最大值: | 7.8W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | PowerPAK® SC-70-6 Dual |
| 供应商设备包: | PowerPAK® SC-70-6 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTLUD3191PZTAGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
2N7002DWH6327XTSA1IR (Infineon Technologies) |
MOSFET 2N-CH 60V 0.3A SOT363 |
|
EL7222CSZE9044Rochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
STS5DNF60LSTMicroelectronics |
MOSFET 2N-CH 60V 5A 8-SOIC |
|
STS2DNF30LSTMicroelectronics |
MOSFET 2N-CH 30V 3A 8SOIC |
|
SMA5117Sanken Electric Co., Ltd. |
MOSFET 6N-CH 250V 7A 12-SIP |
|
UPA2754GR-E2-ARochester Electronics |
POWER, 11A, 30V, N-CH MOSFET |
|
MSCSM120AM027CT6AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C |
|
DMTH4007SPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 40V POWERDI506 |
|
FDMD82100Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SI8900EDB-T2-E1Vishay / Siliconix |
MOSFET 2N-CH 20V 5.4A 10-MFP |
|
FDMC8032LSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 7A 8-MLP |
|
AOTE21115CAlpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 8TSSOP |
