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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO4886Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 100V 3.3A 8SOIC |
|
ALD1105SBLAdvanced Linear Devices, Inc. |
MOSFET 2N/2P-CH 10.6V 14SOIC |
|
CSD88539NDTTexas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC |
|
DMN62D0UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.35A SOT523 |
|
FDJ1027PRochester Electronics |
P-CHANNEL POWER MOSFET |
|
SH8K1TB1ROHM Semiconductor |
MOSFET 2N-CH 30V 5A SOP8 |
|
IRF7309PBFRochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVJD4401NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 0.63A SC88 |
|
NTZD5110NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 294MA SOT563 |
|
AO4822AAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 8A 8SOIC |
|
RM4077S8Rectron USA |
MOSFET N&P-CH 40V 6.7A/7.2A 8SOP |
|
PMV100ENEA,215Rochester Electronics |
3A, 30V, N CHANNEL, SILICON, MOS |
|
FDPC5030SGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V PWRCLIP56 |
