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RES 12.7 OHM 1/4W 1% AXIAL
MOSFET N/P-CH 30V/8V 8-SOIC
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| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V, 8V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A, 3.8A |
| rds on (max) @ id, vgs: | 18mOhm @ 7.8A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | 1.2W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
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