MOSFET 2N-CH 20V 7.5A 8SOIC
KNOB KNURLED W/SKRT 0.125" METAL
类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 7.5A |
rds on (max) @ id, vgs: | 18mOhm @ 7.5A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 17nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 1333pF @ 10V |
功率 - 最大值: | 900mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMC3026LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 6.5A/6.2A 8SO |
|
MCH6662-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 2A MCPH6 |
|
ECH8651R-TL-HRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
PMT280ENEA,115Rochester Electronics |
1.5A, 100V, N CHANNEL, SILICON, |
|
RJK03C0DPA-WS#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING |
|
TC6321T-V/9URoving Networks / Microchip Technology |
MOSFET N/P-CH 200V 2A 8VDFN |
|
SSM6N16FUTE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.1A US6 |
|
NVMFD5C668NLT1GSanyo Semiconductor/ON Semiconductor |
T6 60V S08FL DUAL |
|
BUK762R0-40CRochester Electronics |
PFET, 276A I(D), 40V, 0.00375OHM |
|
AOC2870Alpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CHANNEL 4DFN |
|
DMG6898LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 9.5A 8SO |
|
SSM6P54TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
|
SI9936DYRochester Electronics |
N-CHANNEL POWER MOSFET |