类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 140mA |
rds on (max) @ id, vgs: | 5Ohm @ 100mA, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 12pF @ 15V |
功率 - 最大值: | 125mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOT-963 |
供应商设备包: | SOT-963 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMGD175XN,115Rochester Electronics |
PMGD175XN - SMALL SIGNAL, SC-88 |
|
SI4204DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 19.8A 8-SOIC |
|
FDS8934ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF7341TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 55V 4.7A 8-SOIC |
|
FDW2510NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFD4C20NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V SO8FL |
|
SI7913DN-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 5A PPAK 1212-8 |
|
BUK6209-30C-NEXRochester Electronics |
PFET, 50A I(D), 30V, 0.0192OHM, |
|
SI7288DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 20A PPAK SO-8 |
|
FS70UM-06#B00Rochester Electronics |
70A, 60V, N-CHANNEL MOSFET |
|
ALD1101SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
FDMS7600ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/22A POWER56 |
|
BSS138DW-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.2A SC70-6 |