English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 40V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A |
| rds on (max) @ id, vgs: | 16mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 85nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 2390pF @ 20V |
| 功率 - 最大值: | 3.25W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMC8200Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 8A/12A 8POWER33 |
|
IRF7307PBFRochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL |
|
FDS4885CRochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMC25D1UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 25V/12V TSOT26 |
|
ZXMN6A11DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 2.5A 8-SOIC |
|
FDS8935Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 80V 2.1A 8SOIC |
|
SH8K32TB1ROHM Semiconductor |
MOSFET 2N-CH 60V 4.5A SOP8 |
|
ECH8601M-TL-HRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIA778DJ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 12V/20V SC70-6 |
|
FDS8958A-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 7A/5A 8SOIC |
|
DMN3190LDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 1A SOT363 |
|
ALD110900APALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
SI1539CDL-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 30V SOT363 |
