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| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A |
| rds on (max) @ id, vgs: | 30mOhm @ 7A, 4.5V |
| vgs(th) (最大值) @ id: | 1.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1340pF @ 16V |
| 功率 - 最大值: | 2W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSD2009ATFSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 50V 3A 8-SOIC |
|
AO5804EAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 0.5A SC89-6L |
|
FDR8305NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 4.5A SSOT-8 |
|
NDS8958Sanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 5.3A/4A 8SOIC |
|
AO8801AAlpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 20V 4.5A 8TSSOP |
|
AO4812L_101Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 6A |
|
ALD1115MALAdvanced Linear Devices, Inc. |
MOSFET N/P-CH 10.6V 8MSOP |
|
IRF7901D1TRIR (Infineon Technologies) |
MOSFET 2N-CH 30V 6.2A 8SOIC |
|
SI4226DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 25V 8A 8SOIC |
|
IRF8910GPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 10A 8-SO |
|
SSM6N48FU,RF(DToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A |
|
IRF5810TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 2.9A 6-TSOP |
|
SI4670DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 25V 8A 8SOIC |
