English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A |
| rds on (max) @ id, vgs: | 39mOhm @ 4.4A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16nC @ 8V |
| 输入电容 (ciss) (max) @ vds: | 520pF @ 10V |
| 功率 - 最大值: | 8.3W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | PowerPAK® ChipFET™ Dual |
| 供应商设备包: | PowerPAK® ChipFet Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSM6P35FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2NCH 20V 100MA ES6 |
|
SI1905DL-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 8V 0.57A SC70-6 |
|
SP8M9TBROHM Semiconductor |
MOSFET N/P-CH 30V 9A/5A 8SOIC |
|
IRF5850TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 2.2A 6-TSOP |
|
UPA2375T1P-E1-ARenesas Electronics America |
MOSFET 2N-CH 24V |
|
APTMC120AM16CD3AGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 131A D3 |
|
AON4605_001Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 4.3A/3.4A 8DFN |
|
APTMC120TAM33CTPAGRoving Networks / Microchip Technology |
MOSFET 6N-CH 1200V 78A SP6-P |
|
NTHD4401PT3Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 2.1A CHIPFET |
|
SI1913DH-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 0.88A SC70-6 |
|
PMWD16UN,518NXP Semiconductors |
MOSFET 2N-CH 20V 9.9A 8TSSOP |
|
SI4916DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 10A 8-SOIC |
|
NTJD4401NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 0.63A SOT363 |
