English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 500V |
| 电流 - 连续漏极 (id) @ 25°c: | 180A |
| rds on (max) @ id, vgs: | 20mOhm @ 90A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 10mA |
| 栅极电荷 (qg) (max) @ vgs: | 560nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 28000pF @ 25V |
| 功率 - 最大值: | 1250W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | SP6 |
| 供应商设备包: | SP6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MRF18030BLSR3Rochester Electronics |
RF L BAND, N-CHANNEL |
|
|
CA3140R1167Rochester Electronics |
OPERATIONAL AMPLIFIER |
|
|
NTMFD030N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V T6 8DFN |
|
|
RF1S640Rochester Electronics |
18A, 200V, 0.180 OHM, N-CHANNEL |
|
|
APTM100H45FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 18A SP3 |
|
|
STL52DN4LF7AGSTMicroelectronics |
AUTOMOTIVE-GRADE DUAL N-CHANNEL |
|
|
PMDXB600UNEL,147Rochester Electronics |
0.6A, 20V, 2-ELEMENT, N CHANNEL, |
|
|
MRF9030MBR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
|
APTC60HM70BT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 39A SP3 |
|
|
MRF9060MR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
|
IRF9622156Rochester Electronics |
3A, 200V, 2.4OHM, P-CHANNEL, POW |
|
|
APTC80A10SCTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 800V 42A SP4 |
|
|
FS10KMJ-2#B01Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
