English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF630A_CP001Rochester Electronics |
IRF630A - 200V N-CHANNEL MOSFET |
|
|
FDMC0228Rochester Electronics |
N-CHANNEL POWER TRENCH MOSFET |
|
|
STL105DN4LF7AGSTMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 40 V, |
|
|
MRF1513T1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
|
MMIX2F60N50P3Wickmann / Littelfuse |
MOSFET N-CH |
|
|
FX205-TL-E-ONRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
2SK2631-ERochester Electronics |
POWER MOSFET |
|
|
DMT6018LDR-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V V-DFN3030- |
|
|
DMN65D8LDWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 180MA SOT363 |
|
|
SI1036X-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V 610MA SC89-6 |
|
|
APTM20HM08FGRoving Networks / Microchip Technology |
MOSFET 4N-CH 200V 208A SP6 |
|
|
NTTFD4D0N04HLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET, POWER, 40V POWERTRENCH P |
|
|
FW340-M-TL-E-SYRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
