English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.4A (Ta) |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 6.6nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 278pF @ 15V |
| 功率 - 最大值: | 1.08W (Ta) |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
| 供应商设备包: | TSOT-26 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN16M0UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V X4-DSN2112- |
|
|
MAX8783GTC+Rochester Electronics |
SINGLE-PHASE SYNCHRONOUS MOSFET |
|
|
MTI200WX75GD-SMDWickmann / Littelfuse |
IGBT MOD MOSFET SIXPACK ISOPLUS |
|
|
DMN3022LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
|
IRF512S2532Rochester Electronics |
4.9A, 100V, 0.74 OHM, N-CHANNEL |
|
|
MRF8S18120HSR3,128Rochester Electronics |
RF L BAND, N-CHANNEL |
|
|
2SJ356(0)-T2-AZRochester Electronics |
P-CHANNEL MOSFET |
|
|
APTM50H10FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 37A SP3 |
|
|
SQ1539EH-T1_GE3Vishay / Siliconix |
MOSFET N/P-CH 30V POWERPAKSC70-6 |
|
|
DMHT3006LFJ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V V-DFN5045- |
|
|
CPH3418-TL-HRochester Electronics |
ULTRAHIGH-SPEED SWITCHING APPLIC |
|
|
APTC60AM35T1GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 72A SP1 |
|
|
HUF75842S3Rochester Electronics |
MOSFET N-CH 150V 43A D2PAK |
