类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual), Schottky |
场效应管特征: | Standard |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
rds on (max) @ id, vgs: | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18nC @ 10V, 46.7nC @ 10V |
输入电容 (ciss) (max) @ vds: | 790pF @ 15V, 2130pF @ 15V |
功率 - 最大值: | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerPair™ |
供应商设备包: | 8-PowerPair™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SFT1405-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
DMC2053UVTQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V TSOT26 |
|
FCI17N60Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FS50KM-2-J1#E51Rochester Electronics |
DISCRETE / POWER MOSFET |
|
FDS8926Rochester Electronics |
MOSFET 2N-CH 30V 5.5A 8-SO |
|
FMM50-025TFWickmann / Littelfuse |
MOSFET 2N-CH 250V 30A I4-PAC |
|
DMT3006LDV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V 30V POWERDI333 |
|
2N6792TXRochester Electronics |
2A, 400V, 1.8OHM, N-CHANNEL |
|
APTC80H29T3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 800V 15A SP3 |
|
FS10ASJ-3-T13#C02Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
DMT3022UEV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
PSMN013-40VLDXNexperia |
PSMN013-40VLD - DUAL N-CHANNEL 4 |
|
CAB006M12GM3Wolfspeed - a Cree company |
1200V 2B HALF-BRIDGE |