English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 800V |
| 电流 - 连续漏极 (id) @ 25°c: | 28A |
| rds on (max) @ id, vgs: | 150mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 2mA |
| 栅极电荷 (qg) (max) @ vgs: | 180nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 4507pF @ 25V |
| 功率 - 最大值: | 277W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | SP3 |
| 供应商设备包: | SP3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMC3025LNS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 31V 40V POWERDI333 |
|
|
APTC60HM70T3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 39A SP3 |
|
|
MRF8S21100HSR3,128Rochester Electronics |
RF S BAND, N-CHANNEL, MOSFET |
|
|
IRFR21496Rochester Electronics |
2.2A 250V 2.000 OHM N-CHANNEL |
|
|
APTM50DHM38GRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP6 |
|
|
DMPH6050SPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 26A POWERDI5060-8 |
|
|
RF1S50N06SM9AS2551Rochester Electronics |
50A, 60V, 0.022 OHM, ESD RATED, |
|
|
DMN16M9UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL X3-DSN2718-6 |
|
|
STL64DN4F7AGSTMicroelectronics |
MOSFET N-CH 40V 40A POWERFLAT |
|
|
APTM50HM75FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 46A SP3 |
|
|
FSS248-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
|
AONP36336Alpha and Omega Semiconductor, Inc. |
30V DUAL ASYMMETRIC N-CHANNEL MO |
|
|
OP524,005WeEn Semiconductors Co., Ltd |
OP524/UNCASED/NO MARK*CHIPS ON |
