English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APTM50DDA10T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 37A SP3 |
|
|
APTM20HM20STGRoving Networks / Microchip Technology |
MOSFET 4N-CH 200V 89A SP4 |
|
|
IRFP250S2453Rochester Electronics |
33A, 200V, 0.085 OHM, N-CHANNEL |
|
|
DMP2200UFCL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V U-DFN1616-6 |
|
|
IRFAUIRF540ZRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL POWE |
|
|
IRF9640S2497Rochester Electronics |
11A, 200V, 0.500 OHM, P-CHANNEL |
|
|
DMN65D8LDWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 180MA SOT363 |
|
|
HAT2050TWS-ERochester Electronics |
1A, 100V, N-CHANNEL MOSFET |
|
|
MHT1000HR5178Rochester Electronics |
N CHANNEL ENHANCEMENT-MODE RF PO |
|
|
NTMFD1D4N02P1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 8PQFN |
|
|
NVMFWD016N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH DUAL 60V SO8FL |
|
|
APTM100H35FTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 22A SP4 |
|
|
EFC2J011NUZTDGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 12V 55A 10WLCSP |
