类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 50V |
电流 - 连续漏极 (id) @ 25°c: | 100mA |
rds on (max) @ id, vgs: | 25Ohm @ 10mA, 10V |
vgs(th) (最大值) @ id: | 1.8V @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 16pF @ 5V |
功率 - 最大值: | 300mW |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SC-59-6 |
供应商设备包: | SC-59 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK9K13-40HXNexperia |
BUK9K13-40H - DUAL N-CHANNEL 40 |
|
CAB011M12FM3Wolfspeed - a Cree company |
1200V SIC H-BRIDGE MODULE |
|
FDPC1012SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
EFC6604R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
MRF6V2300NBR5,578Rochester Electronics |
LATERAL N CHANNEL SINGLE-ENDED B |
|
MAX620EJN/R70564Rochester Electronics |
QUAD, HIGH-SIDE MOSFET DRIVER |
|
APTM50AM19FGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 163A SP6 |
|
APTM120A20SGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 50A SP6 |
|
ECH8674-TL-HRochester Electronics |
P-CHANNEL MOSFET |
|
IRF7807ZPBFPRORochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
NTTFD2D8N03P1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12WQFN |
|
FDMS001N025DSDSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 8PQFN |
|
SI7946ADP-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 150V POWERPAK SO8 |