SMA-SP/TNC-RP G174 60I
POWER FIELD-EFFECT TRANSISTOR
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Asymmetrical |
场效应管特征: | Standard |
漏源电压 (vdss): | 25V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) |
rds on (max) @ id, vgs: | 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA, 2.2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 8nC, 25nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 1075pF @ 13V, 3456pF @ 13V |
功率 - 最大值: | 800mW (Ta), 900mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerWDFN |
供应商设备包: | Powerclip-33 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EFC6604R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
MRF6V2300NBR5,578Rochester Electronics |
LATERAL N CHANNEL SINGLE-ENDED B |
|
MAX620EJN/R70564Rochester Electronics |
QUAD, HIGH-SIDE MOSFET DRIVER |
|
APTM50AM19FGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 163A SP6 |
|
APTM120A20SGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 50A SP6 |
|
ECH8674-TL-HRochester Electronics |
P-CHANNEL MOSFET |
|
IRF7807ZPBFPRORochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
NTTFD2D8N03P1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12WQFN |
|
FDMS001N025DSDSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 8PQFN |
|
SI7946ADP-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 150V POWERPAK SO8 |
|
2SJ325-Z-E1-AZRochester Electronics |
P-CHANNEL POWER SWITCHING MOSFET |
|
2SJ653-CB11-ONRochester Electronics |
FOR 60V MOTOR DRIVERS |
|
BSM180D12P2E002ROHM Semiconductor |
1200V, 204A, HALF BRIDGE, SILICO |