English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 50V |
| 电流 - 连续漏极 (id) @ 25°c: | 220mA |
| rds on (max) @ id, vgs: | 3Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 1.45V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 22800pF @ 25V |
| 功率 - 最大值: | 350mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APTM100H35FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 22A SP3 |
|
|
CPH5614-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
DMC3025LDV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 15A POWERDI3333-8 |
|
|
FS30ASJ-2-T13#B00Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
|
FDN5632NRochester Electronics |
N CHANNEL LOGIC LEVEL POWERTRENC |
|
|
DMN2012UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V X3-DSN2718- |
|
|
FDBL9406Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FW342-T-TL-H-SYRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
|
DMN3060LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 25V~30V TSOT26 |
|
|
IRF640ACP001Rochester Electronics |
IRF640A - 200V N-CHANNEL MOSFET |
|
|
JANSR2N7292Rochester Electronics |
25A, 100V, 0.070 OHM, RAD HARD, |
|
|
IRF6802SDTRPBFRochester Electronics |
25V DUAL CONTROL FET IN S- CAN |
|
|
SIZF914DT-T1-GE3Vishay / Siliconix |
DUAL N-CH 25-V (D-S) MOSFET W/SC |
