HEATSINK 45X45X25MM R-TAB
DUAL N-CHANNEL MOSFET, SOT-363
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 50V |
电流 - 连续漏极 (id) @ 25°c: | 220mA |
rds on (max) @ id, vgs: | 3Ohm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 1.45V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 22800pF @ 25V |
功率 - 最大值: | 350mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
供应商设备包: | SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APTM100H35FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 22A SP3 |
|
CPH5614-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMC3025LDV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 15A POWERDI3333-8 |
|
FS30ASJ-2-T13#B00Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
FDN5632NRochester Electronics |
N CHANNEL LOGIC LEVEL POWERTRENC |
|
DMN2012UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V X3-DSN2718- |
|
FDBL9406Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FW342-T-TL-H-SYRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
DMN3060LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 25V~30V TSOT26 |
|
IRF640ACP001Rochester Electronics |
IRF640A - 200V N-CHANNEL MOSFET |
|
JANSR2N7292Rochester Electronics |
25A, 100V, 0.070 OHM, RAD HARD, |
|
IRF6802SDTRPBFRochester Electronics |
25V DUAL CONTROL FET IN S- CAN |
|
SIZF914DT-T1-GE3Vishay / Siliconix |
DUAL N-CH 25-V (D-S) MOSFET W/SC |