类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFD024N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
DMNH6035SPDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI506 |
|
DMC2710UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 |
|
PMV65ENEA,215Rochester Electronics |
2.7A, 40V, N CHANNEL, SILICON, M |
|
FW342-T-TL-HRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
RFH75N05Rochester Electronics |
75A, 50V, 0.008OHM, N-CHANNEL, |
|
ISL6594ACRZ-TR5212Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
NTMFD2D4N03P8Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 8PQFN |
|
EFC4601-M-TR-ONRochester Electronics |
N-CHANNEL MOSFET |
|
FDPC3D5N025X9DSanyo Semiconductor/ON Semiconductor |
MOSFET 2 N-CH 25V 74A 12-PQFN |
|
IRF620R4587Rochester Electronics |
5.0A 200V 0.800 OHM N-CHANNEL |
|
DMN3060LVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 |
|
FMM75-01FWickmann / Littelfuse |
MOSFET 2N-CH 100V 75A I4-PAC-5 |