English
简体中文
MOSFET BVDSS: 41V-60V POWERDI506
ROUND SPACER NYLON 6.22MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
| rds on (max) @ id, vgs: | 35mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 879pF @ 25V |
| 功率 - 最大值: | 2.4W (Ta), 68W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerTDFN |
| 供应商设备包: | PowerDI5060-8 (Type R) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
DMC2710UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 |
|
|
PMV65ENEA,215Rochester Electronics |
2.7A, 40V, N CHANNEL, SILICON, M |
|
|
FW342-T-TL-HRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
|
RFH75N05Rochester Electronics |
75A, 50V, 0.008OHM, N-CHANNEL, |
|
|
ISL6594ACRZ-TR5212Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
|
NTMFD2D4N03P8Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 8PQFN |
|
|
EFC4601-M-TR-ONRochester Electronics |
N-CHANNEL MOSFET |
|
|
FDPC3D5N025X9DSanyo Semiconductor/ON Semiconductor |
MOSFET 2 N-CH 25V 74A 12-PQFN |
|
|
IRF620R4587Rochester Electronics |
5.0A 200V 0.800 OHM N-CHANNEL |
|
|
DMN3060LVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 |
|
|
FMM75-01FWickmann / Littelfuse |
MOSFET 2N-CH 100V 75A I4-PAC-5 |
|
|
APTM10DUM02GRoving Networks / Microchip Technology |
MOSFET 2N-CH 100V 495A SP6 |
|
|
ISL6605CRR5151Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |