类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FW344A-TL-2WXSanyo Semiconductor/ON Semiconductor |
INTEGRATED CIRCUIT |
|
APTC60DDAM70T3GMicrosemi |
MOSFET 2N-CH 600V 39A SP3 |
|
APTM10DUM05TGMicrosemi |
MOSFET 2N-CH 100V 278A SP4 |
|
EFC4627R-A-TRSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 12V 6A CSP4 |
|
APTC90H12SCTGMicrosemi |
MOSFET 4N-CH 900V 30A SP4 |
|
QJD1210011Powerex, Inc. |
MOSFET 2N-CH 1200V 100A SIC |
|
VQ1006PVishay / Siliconix |
MOSFET 4N-CH 90V 0.4A 14DIP |
|
MSCMC90AM12C3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
MSCMC120AM04CT6LIAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C LI |
|
GWM100-01X1-SMDWickmann / Littelfuse |
MOSFET 6N-CH 100V 90A ISOPLUS |
|
IRF6802SDTR1PBFIR (Infineon Technologies) |
MOSFET 2N-CH 25V 16A SA |
|
APTM10DHM09T3GMicrosemi |
MOSFET 2N-CH 100V 139A SP3 |
|
GWM160-0055X1-SMDSAMWickmann / Littelfuse |
MOSFET 6N-CH 55V 150A ISOPLUS |