类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 25V |
电流 - 连续漏极 (id) @ 25°c: | 16A |
rds on (max) @ id, vgs: | 4.2mOhm @ 16A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 35µA |
栅极电荷 (qg) (max) @ vgs: | 13nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 1350pF @ 13V |
功率 - 最大值: | 1.7W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DirectFET™ Isometric SA |
供应商设备包: | DIRECTFET™ SA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
APTM10DHM09T3GMicrosemi |
MOSFET 2N-CH 100V 139A SP3 |
![]() |
GWM160-0055X1-SMDSAMWickmann / Littelfuse |
MOSFET 6N-CH 55V 150A ISOPLUS |
![]() |
UPA2390T1P-E4-ARenesas Electronics America |
MOSFET N-CH DUAL LGA |
![]() |
GWM100-01X1-SMDSAMWickmann / Littelfuse |
MOSFET 6N-CH 100V 90A ISOPLUS |
![]() |
APTM50DUM25TGMicrosemi |
MOSFET 2N-CH 500V 149A LP8 |
![]() |
JANTXV2N7334Microsemi |
MOSFET 4N-CH 100V 1A MO-036AB |
![]() |
APTSM120AM14CD3AGMicrosemi |
POWER MODULE - SIC |
![]() |
APTM20DHM08GMicrosemi |
MOSFET 2N-CH 200V 208A SP6 |
![]() |
IRF6702M2DTR1PBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 15A DIRECTFET |
![]() |
APTC60DSKM45T1GMicrosemi |
MOSFET 2N-CH 600V 49A SP1 |
![]() |
GWM180-004X2-SMDWickmann / Littelfuse |
MOSFET 6N-CH 40V 180A 17-SMD |
![]() |
APTM20DHM10GMicrosemi |
MOSFET 2N-CH 200V 175A SP6 |
![]() |
GWM120-0075P3-SLWickmann / Littelfuse |
MOSFET 6N-CH 75V 118A ISOPLUS |