English
简体中文
PWR ENT RCPT IEC320-C14 PANEL QC
SENSOR PRESSURE 60" H2O 4SIP
MOSFET N-CH DUAL LGA
TUNER DIVERSITY SDB/DVB-T 56TQFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
GWM100-01X1-SMDSAMWickmann / Littelfuse |
MOSFET 6N-CH 100V 90A ISOPLUS |
|
|
APTM50DUM25TGMicrosemi |
MOSFET 2N-CH 500V 149A LP8 |
|
|
JANTXV2N7334Microsemi |
MOSFET 4N-CH 100V 1A MO-036AB |
|
|
APTSM120AM14CD3AGMicrosemi |
POWER MODULE - SIC |
|
|
APTM20DHM08GMicrosemi |
MOSFET 2N-CH 200V 208A SP6 |
|
|
IRF6702M2DTR1PBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 15A DIRECTFET |
|
|
APTC60DSKM45T1GMicrosemi |
MOSFET 2N-CH 600V 49A SP1 |
|
|
GWM180-004X2-SMDWickmann / Littelfuse |
MOSFET 6N-CH 40V 180A 17-SMD |
|
|
APTM20DHM10GMicrosemi |
MOSFET 2N-CH 200V 175A SP6 |
|
|
GWM120-0075P3-SLWickmann / Littelfuse |
MOSFET 6N-CH 75V 118A ISOPLUS |
|
|
UPA1952TE-T1-ARenesas Electronics America |
MOSFET P-CH SC-95 |
|
|
VQ1006P-2Vishay / Siliconix |
MOSFET 4N-CH 90V 0.4A 14DIP |
|
|
ECH8661-TL-HXSanyo Semiconductor/ON Semiconductor |
INTEGRATED CIRCUIT |