类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
晶体管型: | LDMOS |
频率: | 1.06GHz |
获得: | 16.5dB |
电压测试: | 32 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 150 mA |
功率输出: | 300W |
额定电压: | 65 V |
包/箱: | SOT-502A |
供应商设备包: | CDFM2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
A2G35S160-01SR3NXP Semiconductors |
AIRFAST RF POWER GAN TRANSISTOR |
|
BLP05H675XRYAmpleon |
RF FET LDMOS 135V 27DB SOT12232 |
|
MRF8S9120NR3Rochester Electronics |
SINGLE W-CDMA LATERAL N-CHANNEL |
|
MW6S004NT1NXP Semiconductors |
FET RF 68V 1.96GHZ PLD-1.5 |
|
BLF2324M8LS200PUAmpleon |
RF FET LDMOS 65V 17.2DB SOT539B |
|
NE5500234-T1-AZRochester Electronics |
POWER, 1A, 20V, N-CHANNEL MOSFET |
|
MRFE6S9135HR5Rochester Electronics |
FET RF 66V 940MHZ NI-880 |
|
AFT18S230SR3NXP Semiconductors |
FET RF 65V 1.88GHZ NI780S-6 |
|
MRF101AN-STARTNXP Semiconductors |
MRF101AN RF ESSENTIALS COMPONENT |
|
SAV-551+ |
SMT LOW NOISE AMPLIFIER, 45 - 60 |
|
AFT18S230SR5Rochester Electronics |
RF POWER FIELD-EFFECT TRANSISTOR |
|
MRF6V12250HSR5NXP Semiconductors |
FET RF 100V 1.03GHZ NI-780S |
|
PD55015STR-ESTMicroelectronics |
FET RF 40V 500MHZ PWRSO-10 |