类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
晶体管型: | LDMOS (Dual), Common Source |
频率: | 2.11GHz ~ 2.17GHz |
获得: | 17.5dB |
电压测试: | 32 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 1.6 A |
功率输出: | 50W |
额定电压: | 65 V |
包/箱: | SOT-502B |
供应商设备包: | SOT502B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BLF6G22-180PN,135Ampleon |
RF FET LDMOS 65V 17DB SOT539A |
|
SD2904STMicroelectronics |
TRANS RF N-CH HF/VHF/UHF M113 |
|
MRF8S9202GNR3NXP Semiconductors |
FET RF 70V 920MHZ OM780-2G |
|
BLF6G10LS-160RN,11Ampleon |
RF FET LDMOS 65V 22.5DB SOT502B |
|
BLF7G24L-140,118Ampleon |
RF FET LDMOS 65V 18.5DB SOT502A |
|
BLF6G20-40,112Ampleon |
RF FET LDMOS 65V 18.8DB SOT608A |
|
PTF080101M V1IR (Infineon Technologies) |
IC FET RF LDMOS 10W TSSOP-10 |
|
LET20045CSTMicroelectronics |
RF MOSFET N CH 80V 12A M243 |
|
PTFA142401ELV4R250XTMA1IR (Infineon Technologies) |
IC FET RF LDMOS 240W H-33288-2 |
|
MRF8S7235NR3NXP Semiconductors |
FET RF 70V 728MHZ OM780-2 |
|
BLF6G10L-260PRN,11Ampleon |
RF FET LDMOS 65V 22DB SOT539A |
|
BLF7G27LS-140,118Ampleon |
RF FET LDMOS 65V 16DB SOT502B |
|
BLF6G10L-260PBM:11Ampleon |
RF FET LDMOS 65V SOT1110A |